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 DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCV26; BCV46 PNP Darlington transistors
Product specification Supersedes data of 1997 Apr 23 1999 Apr 08
Philips Semiconductors
Product specification
PNP Darlington transistors
FEATURES * High current (max. 500 mA) * Low voltage (max. 60 V) * Very high DC current gain (min. 10000). APPLICATIONS * Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. MARKING
1 2
BCV26; BCV46
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3
1
3
TR1 TR2 2
MAM299
TYPE NUMBER BCV26 BCV46 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia.
MARKING CODE(1) FD FE
Top view
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV26 BCV46 VCES collector-emitter voltage BCV26 BCV46 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open collector VBE = 0 - - - - - - - -65 - -65 -30 -60 -10 -500 -800 -100 250 +150 150 +150 V V V mA mA mA mW C C C PARAMETER collector-base voltage CONDITIONS open emitter - - -40 -80 V V MIN. MAX. UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP Darlington transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BCV26; BCV46
VALUE 500
UNIT K/W
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO BCV26 BCV46 IEBO hFE emitter cut-off current DC current gain BCV26 BCV46 DC current gain BCV26 BCV46 DC current gain BCV26 BCV46 VCEsat VBEsat VBEon fT collector-emitter saturation voltage IC = -100 mA; IB = -0.1 mA base-emitter saturation voltage base-emitter on-state voltage transition frequency IC = -100 mA; IB = -0.1 mA IC = -10 mA; VCE = -5 V IC = -100 mA; VCE = -5 V; (see Fig.2) 20000 - 10000 - - - - - - - 220 - - -1 -1.5 -1.4 - V V V MHz IC = -10 mA; VCE = -5 V; (see Fig.2) 10000 - 4000 - - - PARAMETER collector cut-off current IE = 0; VCB = -30 V IE = 0; VCB = -60 V IC = 0; VEB = -10 V IC = -1 mA; VCE = -5 V; (see Fig.2) 4000 2000 - - - - - - - - - - -100 -100 -100 nA nA nA CONDITIONS MIN. TYP. MAX. UNIT
IC = -30 mA; VCE = -5 V; f = 100 MHz -
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BCV26; BCV46
handbook, full pagewidth
100000 hFE
MGD836
80000
60000
40000
20000
0 -1
-10
-102
IC (mA)
-103
VCE = -2 V.
Fig.2 DC current gain; typical values.
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP Darlington transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BCV26; BCV46
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 08
5
Philips Semiconductors
Product specification
PNP Darlington transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BCV26; BCV46
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 08
6
Philips Semiconductors
Product specification
PNP Darlington transistors
NOTES
BCV26; BCV46
1999 Apr 08
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/04/pp8
Date of release: 1999 Apr 08
Document order number:
9397 750 05537


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